T. Mollenhauer

Silicon etch process options for micro- and nanotechnology using inductively coupled plasmas

Colin Welch, Andy Goodyear, T. Wahlbrink et al. · Microelectronic Engineering · 2006 · 53 citations

Engineering, Materials Engineering, Materials Science +12

Subthreshold behavior of triple-gate MOSFETs on SOI material

Max C. Lemme, T. Mollenhauer, W. Henschel et al. · Solid-State Electronics · 2003 · 46 citations

Engineering, Electrical Engineering, Physics +12

0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes

H.D.B. Gottlob, T. J. Echtermeyer, M. Schmidt et al. · IEEE Electron Device Letters · 2006 · 44 citations

Engineering, Electrical Engineering, Materials Science +17

CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

H.D.B. Gottlob, T. J. Echtermeyer, T. Mollenhauer et al. · Solid-State Electronics · 2006 · 43 citations

Engineering, Electrical Engineering, Materials Science +14

Nanoscale TiN metal gate technology for CMOS integration

Max C. Lemme, J.K. Efavi, T. Mollenhauer et al. · Microelectronic Engineering · 2006 · 42 citations

Engineering, Computer Engineering, Electrical Engineering +14