T. Mollenhauer

Silicon etch process options for micro- and nanotechnology using inductively coupled plasmas

Colin Welch, Andy Goodyear, T. Wahlbrink et al. · Microelectronic Engineering · 2006 · 51 citations

Materials Science, Engineering, Microfabrication +9

Subthreshold behavior of triple-gate MOSFETs on SOI material

Max C. Lemme, T. Mollenhauer, W. Henschel et al. · Solid-State Electronics · 2003 · 46 citations

Triple-gate Mosfets, Engineering, Applied Physics +2

0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes

H.D.B. Gottlob, T. J. Echtermeyer, M. Schmidt et al. · IEEE Electron Device Letters · 2006 · 44 citations

Oxide Heterostructures, Materials Science, Electrical Engineering +11

CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

H.D.B. Gottlob, T. J. Echtermeyer, T. Mollenhauer et al. · Solid-State Electronics · 2006 · 43 citations

Electrical Engineering, Epitaxial Growth, Engineering +4

Nanoscale TiN metal gate technology for CMOS integration

Max C. Lemme, J.K. Efavi, T. Mollenhauer et al. · Microelectronic Engineering · 2006 · 40 citations

Electrical Engineering, Engineering, Nanoelectronics +6