L. Vishnubhotla

Possible observation of P<i>b</i>0 and P<i>b</i>1 centers at irradiated (100)Si/SiO2 interface from electrical measurements

Nobuo Haneji, L. Vishnubhotla, Topoljanskij A.P. · Applied Physics Letters · 1991 · 39 citations

Natural Sciences, Materials Science, Electronic Materials +16

Interface trap generation and electron trapping in fluorinated SiO2

L. Vishnubhotla, T. P., Hsing-Huang Tseng et al. · Applied Physics Letters · 1991 · 33 citations

Engineering, Electrical Engineering, Materials Science +17

Silicon nanocrystal non-volatile memory for embedded memory scaling

R.F. Steimle, R. Muralidhar, R. A. Rao et al. · Microelectronics Reliability · 2007 · 33 citations

Engineering, Computer Engineering, Materials Science +14

A 100 nm copper/low-k bulk CMOS technology with multi Vt and multi gate oxide integrated transistors for low standby power, high performance and RF/analog system on chip applications

G.C.-F. Yeap, J. Chen, Piotr Grudowski et al. · 2003 · 21 citations

Engineering, Computer Engineering, Electrical Engineering +17

A high density 0.10 μm CMOS technology using low K dielectric and copper interconnect

Shivendra Singh Parihar, M. Angyal, B. Boeck et al. · 2002 · 15 citations

Engineering, Computer Engineering, Electrical Engineering +17