Hsing-Huang Tseng

Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- <formula formulatype="inline"><tex>$k$</tex></formula>/Metal Gate Stack Device Reliability and Performance Enhancement

Hsing-Huang Tseng, Philip J. Tobin, S. Kalpat et al. · IEEE Transactions on Electron Devices · 2007 · 51 citations

Engineering, Materials Engineering, Materials Science +16

Interface trap generation and electron trapping in fluorinated SiO2

L. Vishnubhotla, T. P., Hsing-Huang Tseng et al. · Applied Physics Letters · 1991 · 33 citations

Engineering, Electrical Engineering, Materials Science +17

Improvement of Thermal Stability of Ni Germanide Using a Ni–Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs

Yingying Zhang, Jungwoo Oh, Shiguang Li et al. · IEEE Transactions on Nanotechnology · 2009 · 24 citations

Engineering, Materials Engineering, Materials Science +16

Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

Chang Yong Kang, P. D. Kirsch, Byoung Hun Lee et al. · IEEE Transactions on Device and Materials Reliability · 2009 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe

Jen‐Wei Huang, P. D. Kirsch, Jungwoo Oh et al. · IEEE Electron Device Letters · 2009 · 22 citations

Engineering, Electrical Engineering, Materials Science +17