B. Cui

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

A. M. Dabiran, A. M. Wowchak, A. Osinsky et al. · Applied Physics Letters · 2008 · 96 citations

Materials Science, Semiconductors, Electrical Engineering +13

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

Jingbi You, X. W. Zhang, S. G. Zhang et al. · Applied Physics Letters · 2010 · 82 citations

Aluminium Nitride, Electrical Engineering, Solid-state Lighting +12

Development of enhancement mode AlN/GaN high electron mobility transistors

Chin‐Wei Chang, S. J. Pearton, C. F. Lo et al. · Applied Physics Letters · 2009 · 57 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al. · Applied Physics Letters · 2007 · 55 citations

Device Modeling, Semiconductors, Electrical Engineering +15

Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al. · Journal of Applied Physics · 2008 · 34 citations

Materials Science, Electron Density, Electrical Engineering +13