Laura Nyns

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Niamh Waldron, Clément Merckling, Weiming Guo et al. · 2014 · 90 citations

Engineering, Electrical Engineering, Materials Science +15

Diffusion‐Mediated Growth and Size‐Dependent Nanoparticle Reactivity during Ruthenium Atomic Layer Deposition on Dielectric Substrates

Job Soethoudt, Fabio Grillo, Esteban A. Marques et al. · Advanced Materials Interfaces · 2018 · 71 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Advancing CMOS beyond the Si roadmap with Ge and III/V devices

Marc Heyns, A. Alian, Guy Brammertz et al. · 2011 · 60 citations

Engineering, Electrical Engineering, Materials Science +16

The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

Koen Martens, Iuliana Radu, S. Mertens et al. · Journal of Applied Physics · 2012 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology

Florence Bellenger, Brice De Jaeger, Clément Merckling et al. · IEEE Electron Device Letters · 2010 · 51 citations

Engineering, Electrical Engineering, Physics +15