E. Hempfling

Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic

Robert Potter, Amir A. Lakhani, D. M. Beyea et al. · Applied Physics Letters · 1988 · 51 citations

Electrical Engineering, Three-state Logic, Engineering +15

Bias circuit effects on the current-voltage characteristic of double-barrier tunneling structures: Experimental and theoretical results

C. Y. Belhadj, K. P. Martin, S. Ben Amor et al. · Applied Physics Letters · 1990 · 30 citations

Engineering, Theoretical Results, Semiconductor Device +17

Al _0.48 In _0.52 As/Ga _0.47 In _0.53 As resonant tunnelling diodes with large current peak/valley ratio

Amir A. Lakhani, Robert Potter, D. M. Beyea et al. · Electronics Letters · 1988 · 25 citations

Heterojunction InAlAs/InP MESFETs grown by OMVPE

M.A. Fathimulla, Tom Loughran, Lisa Stecker et al. · IEEE Electron Device Letters · 1988 · 18 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +11

A vertically integrated resonant tunneling device with multiple negative differential resistances

Robert Potter, Amir A. Lakhani, H. Hier et al. · IEEE Transactions on Electron Devices · 1988 · 14 citations

Categoryquantum Electronics, Engineering, Emerging Memory Technology +17