Bias circuit effects on the current-voltage characteristic of double-barrier tunneling structures: Experimental and theoretical results

Abstract

Using the stable, dc current-voltage (I-V) curve measured from a double-barrier resonant tunneling structure, we have studied the effects of external circuit elements on device oscillations. A simulation, using the experimental I-V and a simple circuit model for the biasing arrangement, showed that hysteresis and vertical jumps appear in the current-voltage curve when the circuit oscillates. This observation is supported by experimental results obtained on the same device with external circuit elements intentionally added to the biasing configuration.