E. Mizuki

A novel electron-beam exposure technique for 0.1-μm T-shaped gate fabrication

N. Samoto, Yoichi Makino, K. Onda et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 34 citations

Electrical Engineering, Electronic Devices, Engineering +14

InAlAs/InGaAs channel composition modulated transistors with InAs channel and AlAs/InAs superlattice barrier layer

K. Onda, A. Fujihara, Akio Wakejima et al. · IEEE Electron Device Letters · 1998 · 23 citations

Impurity Contamination, Wide-bandgap Semiconductor, Electrical Engineering +10

Over 25-dB Dynamic Range 10-/1-Gbps Optical Burst-mode Receiver using High-power-tolerant APD

Seigo Takahashi, Kazuhiro Shiba, E. Mizuki et al. · 2009 · 22 citations

Photonics, Burst-mode Receiver, Engineering +8

Molecular-beam epitaxial growth of InAs/GaAs superlattices on GaAs substrates and its application to a superlattice channel modulation-doped field-effect transistor

H. Toyoshima, K. Onda, E. Mizuki et al. · Journal of Applied Physics · 1991 · 21 citations

Engineering, Semiconductor Nanostructures, Semiconductors +16

Electrical properties of InAlAs/InGaAs modulation doped structure after SiN passivated annealing

Akio Wakejima, K. Onda, Yuji Ando et al. · Journal of Applied Physics · 1997 · 18 citations

Engineering, Sin Film, Electrical Properties +16