Sergey P. Tumakha

Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states

D. J. Ewing, Lisa M. Porter, Q. Wahab et al. · Journal of Applied Physics · 2007 · 90 citations

Engineering, Electrical Engineering, Materials Science +17

Defect-driven inhomogeneities in Ni∕4H–SiC Schottky barriers

Sergey P. Tumakha, D. J. Ewing, Lisa M. Porter et al. · Applied Physics Letters · 2005 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

Role of Interface Layers and Localized States in TiAl-Based Ohmic Contacts to p-Type 4H-SiC

Min Gao, Susumu Tsukimoto, S. H. Goss et al. · Journal of Electronic Materials · 2007 · 35 citations

Engineering, Materials Engineering, Materials Science +15

4H- to 3C-SiC Polytypic Transformation during Oxidation

Robert S. Okojie, Ming Xhang, P. Pirouz et al. · Materials science forum · 2002 · 26 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +10

Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2–HfO2–SiO2–Si stacks

Yuri M. Strzhemechny, M. Bataiev, Sergey P. Tumakha et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2008 · 20 citations

Natural Sciences, Materials Science, Physics +17