F. Al-Amoody

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II–VI Gate Insulators

F. Jain, E. Suarez, Mukesh Gogna et al. · Journal of Electronic Materials · 2009 · 55 citations

Quantum Science, Non-volatile Memory, Engineering +6

A 14 nm SoC platform technology featuring 2<sup>nd</sup> generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um<sup>2</sup> SRAM cells, optimized for low power, high performance and high density SoC products

C.-H. Jan, F. Al-Amoody, H.-Y. Chang et al. · 2015 · 48 citations

Edge 14, Engineering, Vlsi Design +17

Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators

F. Jain, B.I. Miller, E. Suarez et al. · Journal of Electronic Materials · 2011 · 43 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +5

Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator

Mukesh Gogna, E. Suarez, P.‐Y. Chan et al. · Journal of Electronic Materials · 2011 · 32 citations

Materials Science, Engineering, Applied Physics +4

Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II–VI Tunnel Insulators

E. Suarez, Mukesh Gogna, F. Al-Amoody et al. · Journal of Electronic Materials · 2010 · 18 citations

Quantum Science, Non-volatile Memory, Engineering +7