P.‐Y. Chan - Concepedia

Author

P.‐Y. Chan

University of Connecticut

Also Known As

P. Chan, P.-Y. Chan, P.Y. Chan, P.‐Y. Chan

Publications

244

Citations

H-Index

Concepts

All Affiliations

University of Connecticut Synopsys (United States)

About

P.‐Y. Chan is an author at University of Connecticut specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	205
2	Applied Physics	7	7	205
3	Electrical Engineering	5	5	118
4	Computer Engineering	1	1	13
5	Materials Science	1	1	32

P.‐Y. Chan

Publications

215

Citations

H-Index

Page 1

	Year	Citations
Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II–VI Gate Insulators F. Jain, E. Suarez, Mukesh Gogna, Journal of Electronic Materials Quantum ScienceNon-volatile MemoryEngineeringPhysicsNanoelectronics	2009	55
Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators F. Jain, B.I. Miller, E. Suarez, Journal of Electronic Materials SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringElectronic Engineering	2011	43
Quantum Dot Channel (QDC) Field-Effect Transistors (FETs) Using II–VI Barrier Layers F. Jain, Supriya Karmakar, P.‐Y. Chan, Journal of Electronic Materials SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringField-effect Transistors	2012	36
Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator Mukesh Gogna, E. Suarez, P.‐Y. Chan, Journal of Electronic Materials Materials ScienceEngineeringApplied PhysicsMemory DeviceOptoelectronic Devices	2011	32
Novel Multistate Quantum Dot Gate FETs Using SiO2 and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators M. Lingalugari, K. Baskar, P.‐Y. Chan, Journal of Electronic Materials Electrical EngineeringEngineeringNanoelectronicsGate InsulatorsOxide Electronics	2013	16
QD floating gate NVRAM using QD channel for faster erasing M. Lingalugari, P.‐Y. Chan, E. Heller, Electronics Letters Qdnvram CellNon-volatile MemoryElectrical EngineeringEngineeringQuantum Computing	2017	13
Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators P.‐Y. Chan, Mukesh Gogna, E. Suarez, Journal of Electronic Materials	2011	10
Four-State Sub-12-nm FETs Employing Lattice-Matched II–VI Barrier Layers F. Jain, P.‐Y. Chan, E. Suarez, Journal of Electronic Materials Semiconductor TechnologyElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2013	10

Page 1