Novel Multistate Quantum Dot Gate FETs Using SiO2 and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators - Concepedia

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Novel Multistate Quantum Dot Gate FETs Using SiO2 and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators

16

Citations

7

References

2013

Year

M. Lingalugari, K. Baskar, P.‐Y. Chan, Pierre Dufilié, E. Suarez, J. Chandy, E. Heller, F. Jain

Journal of Electronic Materials

Electrical EngineeringEngineeringNanoelectronicsGate InsulatorsOxide ElectronicsApplied PhysicsLattice-matched Zns-znmgs-znsSemiconductor Device

References

	Year	Citations

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