Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II–VI Gate Insulators

F. Jain, E. Suarez, Mukesh Gogna, +9

Journal of Electronic Materials

Quantum ScienceNon-volatile MemoryEngineeringPhysicsNanoelectronics +4

Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators

F. Jain, B.I. Miller, E. Suarez, +6

Journal of Electronic Materials

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringElectronic Engineering +3

Modeling of nonvolatile floating gate quantum dot memory

El-Sayed Hasaneen, E. Heller, Rishi Bansal, +2

Solid-State Electronics

Gate QuantumNon-volatile MemoryEngineeringQuantum ComputingPhysics +2

Quantum Dot Channel (QDC) Field-Effect Transistors (FETs) Using II–VI Barrier Layers

F. Jain, Supriya Karmakar, P.‐Y. Chan, +4

Journal of Electronic Materials

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringField-effect Transistors +7

SPATIAL WAVEFUNCTION-SWITCHED (SWS)-FET: A NOVEL DEVICE TO PROCESS MULTIPLE BITS SIMULTANEOUSLY WITH SUB-PICOSECOND DELAYS

F. Jain, J. Chandy, B.I. Miller, +2

International Journal of High Speed Electronics and Systems

EngineeringField-effect TransistorsProgrammable PhotonicsSemiconductor DeviceOptical Computing +16

Device and circuit modeling using novel 3-state quantum dot gate FETs

F. Jain, E. Heller, Supriya Karmakar, +1

Device ModelingSemiconductorsElectrical EngineeringCategoryquantum ElectronicsEngineering +13

Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II–VI Tunnel Insulators

E. Suarez, Mukesh Gogna, F. Al-Amoody, +4

Journal of Electronic Materials

Quantum ScienceNon-volatile MemoryEngineeringQuantum ComputingPhysics +5

Floating Gate Nonvolatile Memory Using Individually Cladded Monodispersed Quantum Dots

Ravi Shankar R. Velampati, El-Sayed Hasaneen, E. Heller, +1

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Non-volatile MemoryEngineeringEmerging Memory TechnologySemiconductor MaterialsIntegrated Circuits +15

Analysis of In0.52Al0.48As/In0.53Ga0.47As/InP quantum wire MODFETs employing coupled well channels

E. Heller, Syed K. Islam, G. Zhao, +1

Solid-State Electronics

Electrical EngineeringEngineeringPhysicsQuantum DeviceApplied Physics +2

Novel Multistate Quantum Dot Gate FETs Using SiO2 and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators

M. Lingalugari, K. Baskar, P.‐Y. Chan, +5

Journal of Electronic Materials

Electrical EngineeringEngineeringNanoelectronicsGate InsulatorsOxide Electronics +3