Mukesh Gogna

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II–VI Gate Insulators

F. Jain, E. Suarez, Mukesh Gogna et al. · Journal of Electronic Materials · 2009 · 55 citations

Quantum Science, Non-volatile Memory, Engineering +6

Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators

F. Jain, B.I. Miller, E. Suarez et al. · Journal of Electronic Materials · 2011 · 43 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +5

Quantum Dot Channel (QDC) Field-Effect Transistors (FETs) Using II–VI Barrier Layers

F. Jain, Supriya Karmakar, P.‐Y. Chan et al. · Journal of Electronic Materials · 2012 · 36 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +9

Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator

Mukesh Gogna, E. Suarez, P.‐Y. Chan et al. · Journal of Electronic Materials · 2011 · 32 citations

Materials Science, Engineering, Applied Physics +4

Three‐state quantum dot gate field‐effect transistor in silicon‐on‐insulator

Supriya Karmakar, Mukesh Gogna, E. Suarez et al. · IET Circuits Devices & Systems · 2015 · 30 citations