M. Nagaoka

Characterization of reactively sputtered WN<i>x</i> film as a gate metal for self-alignment GaAs metal–semiconductor field effect transistors

Naotaka Uchitomi, M. Nagaoka, K. Shimada et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 48 citations

Semiconductors, Materials Science, Electrical Engineering +14

A novel resonant-type GaAs SPDT switch IC with low distortion characteristics for 1.9 GHz personal handy-phone system

K. Kawakyu, Yoshiko Ikeda, M. Nagaoka et al. · 2002 · 24 citations

Low-power Electronics, Electrical Engineering, Second Order Distortion +12

High-efficiency monolithic GaAs power MESFET amplifier operating with a single low voltage supply for 1.9-GHz digital mobile communication applications

M. Nagaoka, T. Inoue, K. Kawakyu et al. · 2002 · 15 citations

Low-power Electronics, Electrical Engineering, Engineering +10

A self-aligned gate GaAs MESFET with p-pocket layers for high-efficiency linear power amplifiers

K. Nishihori, Y. Kitaura, M. Hirose et al. · IEEE Transactions on Electron Devices · 1998 · 12 citations

Low-power Electronics, Electrical Engineering, Engineering +12

A 2-V operation RF front-end GaAs MMIC for PHS hand-set

T. Seshita, K. Kawakyu, H. Wakimoto et al. · 2002 · 11 citations

Rf Subsystem, Electrical Engineering, Phs Hand-set +12