K. Nishihori

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Active since

1994

Affiliations

K. Nishihori is an author at Toshiba (Japan) specializing in semiconductor devices, microwave semiconductor devices, and metal-semiconductor field-effect transistors.

Publications per year

1994–1998

Publications

Refractory WN<sub>x</sub>/W Self-Aligned Gate GaAs Power Metal-Semiconductor Field-Effect Transistor for 1.9-GHz Digital Mobile Communication System Operating with a Single Low-Voltage Supply

Masami Nagaoka, Kenji Ishida, T. Matsunaga et al. · Japanese Journal of Applied Physics · 1994 · 13 citations

Engineering, Electrical Engineering, Microelectronics +16

A self-aligned gate GaAs MESFET with p-pocket layers for high-efficiency linear power amplifiers

K. Nishihori, Y. Kitaura, M. Hirose et al. · IEEE Transactions on Electron Devices · 1998 · 12 citations

Engineering, Electrical Engineering, Microelectronics +16

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