A 2-V operation RF front-end GaAs MMIC for PHS hand-set

Abstract

A single 2-V operation RF front-end MMIC has been developed using three kinds of self-aligned gate MESFETs. Its transmitter block of a power amplifier with an antenna switch exhibited a power gain of 28.9 dB and a high power-added efficiency of 27.0% at 20.5-dBm output power. The receiver block of a low-noise amplifier with the antenna switch exhibits a noise figure of 3.4 dB and a gain of 11.1 dB.