K. Board - Concepedia

Author

K. Board

Swansea University

Also Known As

K Board, K. BOARD, K. Board, Kenneth Board, Koopman

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Swansea University University of Wales Cornell University Cairo University United States Department of the Army

About

K. Board is an author at Swansea University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	21	763
2	Applied Physics	15	18	705
3	Electrical Engineering	15	19	729
4	Computer Engineering	2	2	38
5	Materials Engineering	1	1	17

K. Board

Publications

934

Citations

H-Index

Page 1

	Year	Citations
Planar-doped barriers in GaAs by molecular beam epitaxy Rohit Malik, T. R. AuCoin, R. L. Ross, Electronics Letters Electrical EngineeringEngineeringRf SemiconductorPhysicsBarrier Height	1980	247
Theory of a novel voltage-sustaining layer for power devices X.B. Chen, Philip Mawby, K. Board, Microelectronics Journal	1998	124
Lateral resurfed COMFET M. Darwish, K. Board Electronics Letters Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringVertical Comfet	1984	73
A study of Ge/GaAs interfaces grown by molecular beam epitaxy R. A. Stall, C. E. C. Wood, K. Board, Journal of Applied Physics Ge LayersElectrical EngineeringEpitaxial GrowthEngineeringPhysics	1981	66
Ballistic electron motion in GaAs at room temperature L.F. Eastman, R. A. Stall, D. W. Woodard, Electronics Letters SemiconductorsN+-p−-n+ Gaas StructuresElectrical EngineeringSemiconductor TechnologyBallistic Electron Motion	1980	62
Regenerative switching device using MBE-grown gallium arsenide C. E. C. Wood, L.F. Eastman, K. Board, Electronics Letters	1982	47
Semiconductor Device Modelling K. Board IEE Review Device ModelingSemiconductorsElectrical EngineeringSemiconductor DevicesSemiconductor Device Modelling	1989	34
Optimization of breakdown voltage and on-resistance of VDMOS transistors M. Darwish, K. Board IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringVlsi DesignBias Temperature Instability	1984	31
Theory of triangular-barrier bulk unipolar diodes including minority-carrier effects S. E. D. Habib, K. Board IEEE Transactions on Electron Devices Electrical EngineeringEngineeringMajority-carrier DiodeMinority-carrier EffectsBarrier Height	1983	22
Lateral high-voltage devices using an optimized variational lateral doping Xu-Yao Chen, Philip Mawby, C.A.T. Salama, International Journal of Electronics Low-power ElectronicsLateral DevicesElectrical EngineeringPiece-wise Constant DopingEngineering	1996	22

Page 1