K. Board

Planar-doped barriers in GaAs by molecular beam epitaxy

Rohit Malik, T. R. AuCoin, R. L. Ross et al. · Electronics Letters · 1980 · 247 citations

Electrical Engineering, Engineering, Rf Semiconductor +11

Theory of a novel voltage-sustaining layer for power devices

X.B. Chen, Philip Mawby, K. Board et al. · Microelectronics Journal · 1998 · 124 citations

Lateral resurfed COMFET

M. Darwish, K. Board · Electronics Letters · 1984 · 73 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +9

A study of Ge/GaAs interfaces grown by molecular beam epitaxy

R. A. Stall, C. E. C. Wood, K. Board et al. · Journal of Applied Physics · 1981 · 66 citations

Ge Layers, Electrical Engineering, Epitaxial Growth +13

Ballistic electron motion in GaAs at room temperature

L.F. Eastman, R. A. Stall, D. W. Woodard et al. · Electronics Letters · 1980 · 62 citations

Semiconductors, N+-p−-n+ Gaas Structures, Electrical Engineering +9