Concepedia

F. Yanagawa

FY

Statistics

Publications

13

Citations

241

H-Index

11

Active since

1978

Affiliations

NTT (Japan)(Current)

NTT Basic Research Laboratories

NTT (United States)

F. Yanagawa is an author at NTT (Japan) specializing in applied physics, engineering, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMicroelectronicsSemiconductorsNanoelectronicsPhysicsQuantum MaterialsOptoelectronicsElectronic Devices

Publications per year

1978–1989

13

Publications

13

A GaAsMISFET using an MBE-grown CaF/sub 2/ gate insulator layer

Takao Waho, F. Yanagawa · IEEE Electron Device Letters · 1988 · 38 citations

Electrical Engineering, Epitaxial Growth, Engineering +9

A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas

Kunishige Oe, Makoto Hirano, Kunihiro Arai et al. · Japanese Journal of Applied Physics · 1985 · 28 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +8

An experimental nanosecond Josephson 1K RAM using 5-µm Pb-alloy technology

M. Yamamoto, Y. Yamauchi, Kazunori Miyahara et al. · IEEE Electron Device Letters · 1983 · 27 citations

Electrical Engineering, Josephson Junctions, Engineering +11

Large transconductance n<sup>+</sup>-Ge gate AlGaAs/GaAs MISFET with thin gate insulator

K. Maezawa, T. Mizu, Kunihiro Arai et al. · IEEE Electron Device Letters · 1986 · 21 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +9

A high speed molybdenum gate MOS RAM

Masaki Kondo, T. Mano, F. Yanagawa et al. · IEEE Journal of Solid-State Circuits · 1978 · 19 citations

Non-volatile Memory, Electrical Engineering, Engineering +11

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