Tackhwi Lee

Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer

Hyoung-sub Kim, Manhong Zhang, Chang-Yong Kang et al. · IEEE Electron Device Letters · 2006 · 81 citations

Engineering, Mos Structures, Gaas Substrate +16

Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation

Hyoung-Sub Kim, Injo Ok, Manhong Zhang et al. · Applied Physics Letters · 2006 · 62 citations

Materials Science, Semiconductors, Electrical Engineering +15

Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers

Hyoung-Sub Kim, Injo Ok, Manhong Zhang et al. · Applied Physics Letters · 2006 · 51 citations

Semiconductors, Silicon/germanium Ipls, Electrical Engineering +13

Structural advantage for the EOT scaling and improved electron channel mobility by incorporating dysprosium oxide (Dy/sub 2/O/sub 3/) into HfO/sub 2/ n-MOSFETs

Tackhwi Lee, Se Jong Rhee, Chang Yong Kang et al. · IEEE Electron Device Letters · 2006 · 31 citations

Engineering, Electron Channel Mobility, Mechanical Engineering +23

Aggressively scaled ultra thin undoped HfO/sub 2/ gate dielectric (EOT<0.7 nm) with TaN gate electrode using engineered interface layer

Chang‐Hwan Choi, Chang-Yong Kang, Se Jong Rhee et al. · IEEE Electron Device Letters · 2005 · 28 citations

Materials Science, Materials Engineering, Electrical Engineering +15