Tomokazu Domon

Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT

Wataru Saito, Tomokazu Domon, Ichiro Omura et al. · IEEE Electron Device Letters · 2006 · 59 citations

Electrical Engineering, Gan Hemts, Engineering +10

Gallium Nitride power HEMT for high switching frequency power electronics

Ichiro Omura, Wataru Saito, Tomokazu Domon et al. · 2007 · 39 citations

Electrical Engineering, Engineering, Rf Semiconductor +14

High Power Density Converter using SiC-SBD

Ichiro Omura, M. Tsukuda, Wataru Saito et al. · 2007 · 21 citations

Electrical Engineering, Output Power Density, Engineering +6

380v/1.9A GaN power-HEMT: current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada et al. · 2006 · 20 citations

Electrical Engineering, Engineering, High Voltage Engineering +9

Electrical and mechanical package design for 4.5kV ultra high power IEGT with 6kA turn-off capability

Ichiro Omura, Tomokazu Domon, Eitaro Miyake et al. · 2004 · 15 citations

Low-power Electronics, Electrical Engineering, Current Imbalance +15