Hyun Kwang Jung

Amorphous InGaZnO Thin-Film Transistors—Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range

Yongsik Kim, Minkyung Bae, Woojoon Kim et al. · IEEE Transactions on Electron Devices · 2012 · 83 citations

Engineering, Electrical Engineering, Physics +15

Impact of Oxygen Flow Rate on the Instability Under Positive Bias Stresses in DC-Sputtered Amorphous InGaZnO Thin-Film Transistors

Sung‐Chul Kim, Yong Woo Jeon, Yongsik Kim et al. · IEEE Electron Device Letters · 2011 · 75 citations

Engineering, Electrical Engineering, Materials Science +17

Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor

Do Hyung Kim, Dong Youn Yoo, Hyun Kwang Jung et al. · Applied Physics Letters · 2011 · 25 citations

Engineering, Materials Engineering, Materials Science +17

Effect of interface states on the instability under temperature stress in amorphous SiInZnO thin film transistor

Do Hyung Kim, Hyun Kwang Jung, Dae Hwan Kim et al. · Applied Physics Letters · 2011 · 10 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation on mechanism for instability under drain current stress in amorphous Si–In–Zn–O thin-film transistors

Do Hyung Kim, Hyun Kwang Jung, Woochul Yang et al. · Thin Solid Films · 2012 · 10 citations

Engineering, Electrical Engineering, Materials Science +14