Do Hyung Kim

Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor

Sang Yeol Lee, Do Hyung Kim, Eugene Chong et al. · Applied Physics Letters · 2011 · 129 citations

Engineering, Electrical Engineering, Materials Science +17

Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress

Bosul Kim, Eugene Chong, Do Hyung Kim et al. · Applied Physics Letters · 2011 · 52 citations

Engineering, Electrical Engineering, Materials Science +17

InGaAs MOSFETs for CMOS: Recent advances in process technology

Jesús A. del Alamo, D.A. Antoniadis, Alex Guo et al. · 2013 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of magnesium oxide passivation on the performance of amorphous indium–gallium–zinc-oxide thin film transistors

Dong Youn Yoo, Eugene Chong, Do Hyung Kim et al. · Thin Solid Films · 2011 · 27 citations

Engineering, Materials Engineering, Materials Science +12

Enhancement of picture quality on ultra-low brightness by optimizing the electrical potential required for OLED charging in the AMOLED displays

Se Hwan Na, Won Kyung Min, Do Hyung Kim et al. · Journal of Information Display · 2021 · 26 citations · Full text

Engineering, Visualization, Color Vision +13