M. Hamilton

High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN

D. Walker, E. Monroy, Patrick Kung et al. · Applied Physics Letters · 1999 · 187 citations

Wide-bandgap Semiconductor, Electrical Engineering, Optical Materials +9

High-quality visible-blind AlGaN <i>p-i-n</i> photodiodes

E. Monroy, M. Hamilton, D. Walker et al. · Applied Physics Letters · 1999 · 143 citations

Electrical Engineering, Engineering, Photodetectors +11

Visible blind GaN <i>p-i-n</i> photodiodes

D. Walker, A. Saxler, Patrick Kung et al. · Applied Physics Letters · 1998 · 111 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +13

Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates

Patrick Kung, D. Walker, M. Hamilton et al. · Applied Physics Letters · 1999 · 86 citations

Wide-bandgap Semiconductor, Lateral Epitaxial Overgrowth, Aluminium Nitride +18

Gallium nitride (GaN) HEMT's: progress and potential for commercial applications

J. R. Shealy, J. Smart, Matthew Poulton et al. · 2003 · 38 citations

Wide-bandgap Semiconductor, Power Switches, Electrical Engineering +13