D. E. J. Soley

On the incorporation mechanism of Fe in GaN grown by metal‐organic vapour phase epitaxy

R.S. Balmer, D. E. J. Soley, Andrew J. Simons et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2006 · 31 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +10

Determination of the dielectric constant of GaN in the kHz frequency range

Michael J. Kane, Michael J. Uren, D. J. Wallis et al. · Semiconductor Science and Technology · 2011 · 28 citations

An MBE growth facility for real-time <i>in</i> <i>situ</i> synchrotron x-ray topography studies of strained-layer III–V epitaxial materials

C. R. Whitehouse, S. J. Barnett, D. E. J. Soley et al. · Review of Scientific Instruments · 1992 · 23 citations

Engineering, Dislocation Nucleation, Mbe Growth Facility +18

Composition measurement in strained AlGaN epitaxial layers using x-ray diffraction

D. J. Wallis, A.M. Keir, R.S. Balmer et al. · Applied Physics Letters · 2004 · 13 citations

Materials Science, Aluminium Nitride, Engineering +13