A.M. Keir

Surface topography changes during the growth of GaAs by molecular beam epitaxy

G. W. Smith, A. J. Pidduck, C. R. Whitehouse et al. · Applied Physics Letters · 1991 · 68 citations

Natural Sciences, Materials Engineering, Materials Science +17

In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation

S. J. Barnett, A.M. Keir, A.G. Cullis et al. · Journal of Physics D Applied Physics · 1995 · 53 citations · Full text

Engineering, Materials Engineering, Materials Science +17

A study of the structure and electrical properties of Cd<i>x</i>Hg1−<i>x</i>Te grown by metalorganic vapor phase epitaxy (interdiffused multilayer process)

S.J.C. Irvine, J.S. Gough, J. Giess et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 44 citations

Engineering, Materials Engineering, Materials Science +17

Rapid chemography of porous silicon undergoing hydrolysis

Leigh Canham, S Saunders, Paul B. Heeley et al. · Advanced Materials · 1994 · 39 citations

Natural Sciences, Chemistry, Materials Science +16

Thermal mapping of defects in AlGaN∕GaN heterostructure field-effect transistors using micro-Raman spectroscopy

J. W. Pomeroy, Martin Kuball, D. J. Wallis et al. · Applied Physics Letters · 2005 · 39 citations

Engineering, Electrical Engineering, Materials Science +17