J. Giess

Recent developments in the MOVPE of II–VI compounds

J.B. Mullin, S.J.C. Irvine, J. Giess et al. · Journal of Crystal Growth · 1985 · 49 citations

Recent Developments, Inorganic Chemistry, Inorganic Synthesis +1

Recent developments in the pyrolytic and photolytic deposition of (Cd,Hg)Te and related II–VI materials

S.J.C. Irvine, J.B. Mullin, J. Giess et al. · Journal of Crystal Growth · 1988 · 46 citations

Materials Science, Inorganic Chemistry, Ii-vi Semiconductor +10

A study of the structure and electrical properties of Cd<i>x</i>Hg1−<i>x</i>Te grown by metalorganic vapor phase epitaxy (interdiffused multilayer process)

S.J.C. Irvine, J.S. Gough, J. Giess et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 44 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +14

Photo-metal organic vapor phase epitaxy: A low temperature method for the growth of Cd<i>x</i>Hg1−<i>x</i>Te

S.J.C. Irvine, J. Giess, J.B. Mullin et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 43 citations

Engineering, Low Temperature Method, Chemistry +17

The growth of high quality CdxHg1−xTe by MOVPE onto GaAs substrates

J. Giess, J.S. Gough, S.J.C. Irvine et al. · Journal of Crystal Growth · 1985 · 39 citations

Materials Science, Ii-vi Semiconductor, Electrical Engineering +8