Recent developments in the pyrolytic and photolytic deposition of (Cd,Hg)Te and related II–VI materials

A new MOVPE technique for the growth of highly uniform CMT

Jon Tunnicliffe, S.J.C. Irvine, O. D. Dosser et al. · Journal of Crystal Growth · 1984 · 223 citations

Materials Engineering, Electrical Engineering, New Movpe Technique +3

Calculation of intrinsic carrier concentration in Hg1−<i>x</i>CdxTe

Gary L. Hansen, J. L. Schmit · Journal of Applied Physics · 1983 · 219 citations

Wide-bandgap Semiconductor, Ii-vi Semiconductor, Engineering +14

Organometallic growth of II–VI compounds

J.B. Mullin, S.J.C. Irvine, D.J. Ashen · Journal of Crystal Growth · 1981 · 176 citations

Inorganic Chemistry, Organometallic Growth, Chemistry +2

The Use of Metal-Organics in the Preparation of Semiconductor Materials

H. M. Manasevit, W. I. Simpson · Journal of The Electrochemical Society · 1971 · 166 citations

Materials Science, Engineering, Organic Electronics +5

The growth by MOVPE and characterisation of CdxHg1−xTe

S.J.C. Irvine, J.B. Mullin · Journal of Crystal Growth · 1981 · 132 citations

Crystallography, Chemistry, Physicochemical Analysis