O. D. Dosser - Concepedia

Author

O. D. Dosser

Worcestershire Royal Hospital

Also Known As

O D Dosser, O. D. Dosser, O.D Dosser, O.D. DOSSER, O.D. Dosser, OD Dosser

Publications

911

Citations

H-Index

Concepts

All Affiliations

Worcestershire Royal Hospital

About

O. D. Dosser is an author at Worcestershire Royal Hospital specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	856
2	Applied Physics	10	10	469
3	Chemistry	3	3	198
4	Electrical Engineering	2	2	283
5	Chemical Engineering	1	1	17

O. D. Dosser

Publications

882

Citations

H-Index

Page 1

	Year	Citations
A new MOVPE technique for the growth of highly uniform CMT Jon Tunnicliffe, S.J.C. Irvine, O. D. Dosser, Journal of Crystal Growth Materials EngineeringElectrical EngineeringNew Movpe TechniqueEngineeringMicroelectronics	1984	223
Luminescent anodized silicon aerocrystal networks prepared by supercritical drying Leigh Canham, A. G. Cullis, C. Pickering, Nature Materials ScienceEngineeringNanoporous MaterialNanomaterialsMaterial Innovation	1994	190
Correlation of the structural and optical properties of luminescent, highly oxidized porous silicon A. G. Cullis, Leigh Canham, G. M. Williams, Journal of Applied Physics Optical MaterialsEngineeringNanoporous MaterialLuminescent GlassOptoelectronic Devices	1994	140
Physical vapour deposition techniques for the growth of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub>thin films R.G. Humphreys, J.S. Satchell, N. G. Chew, Superconductor Science and Technology Materials ScienceMaterials EngineeringEpitaxial GrowthEngineeringPhysics	1990	117
YBa2Cu3O7 thin-film step junctions on MgO substrates J.A. Edwards, J.S. Satchell, N. G. Chew, Applied Physics Letters Superconducting MaterialEngineeringSemiconductor DeviceJosephson JunctionsNanoelectronics	1992	60
Photo-metal organic vapor phase epitaxy: A low temperature method for the growth of Cd<i>x</i>Hg1−<i>x</i>Te S.J.C. Irvine, J. Giess, J.B. Mullin, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena EngineeringLow Temperature MethodChemistryChemical DepositionSemiconductors	1985	43
The Structure of Porous Silicon Revealed by Electron Microscopy A.G. Cullis, Leigh Canham, O. D. Dosser MRS Proceedings Materials ScienceEngineeringNanoporous MaterialMicroscopyNanotechnology	1991	27
Epitaxial growth of CdxHg1−xTe by photo-MOVPE S.J.C. Irvine, J. Giess, J.B. Mullin, Materials Letters Epitaxial GrowthApplied PhysicsMolecular Beam Epitaxy	1985	26
Laser-induced selected area epitaxy of CdTe and HgTe S.J.C. Irvine, H. Hill, Janet E. Hails, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringLaser ApplicationsLaser MaterialOptoelectronic DevicesSemiconductors	1990	17
Selected area epitaxy in II–VI compounds by laser-induced photo-metalorganic vapor phase epitaxy S.J.C. Irvine, H. Hill, G. T. Brown, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Optical MaterialsEngineeringLaser ApplicationsLaser MaterialOptoelectronic Devices	1989	15

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