M. Arabi

AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment

M. Rafik, A.-P. Nguyen, X. Garros et al. · 2018 · 31 citations

Reliability, Electrical Engineering, Reliability Engineering +15

Key parameters driving transistor degradation in advanced strained SiGe channels

Cheikh Ndiaye, M. Arabi, Narendra Parihar et al. · 2018 · 29 citations

Materials Engineering, Electrical Engineering, Engineering +13

Modeling of Process (Ge, N) Dependence and Mechanical Strain Impact on NBTI in HKMG SiGe GF FDSOI p-MOSFETs and RMG p-FinFETs

Narendra Parihar, Ravi Tiwari, Cheikh Ndiaye et al. · 2018 · 23 citations

Device Modeling, Materials Engineering, Electrical Engineering +13

New Insights on Device Level TDDB at GHz Speed in Advanced CMOS Nodes

M. Arabi, X. Federspiel, F. Cacho et al. · IEEE Transactions on Device and Materials Reliability · 2019 · 14 citations

Engineering, Vlsi Design, Radio Frequency +19

Modeling self-heating effects in advanced CMOS nodes

M. Arabi, A. Cros, X. Federspiel et al. · 2018 · 10 citations

Engineering, Advanced Cmos Nodes, Beol Self-heating Simulation +19