A. Casel

A 90-GHz double-drift IMPATT diode made with Si MBE

J.-F. Luy�, A. Casel, W. Behr et al. · IEEE Transactions on Electron Devices · 1987 · 97 citations

Engineering, Electrical Engineering, Materials Science +15

Properties of Si layers grown by molecular beam epitaxy at very low temperatures

H. Jorke, H. Kibbel, F. Schäffler et al. · Applied Physics Letters · 1989 · 37 citations

Natural Sciences, Materials Science, Physics +17

Comparison of carrier profiles from spreading resistance analysis and from model calculations for abrupt doping structures

A. Casel, H. Jorke · Applied Physics Letters · 1987 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Boron contamination of <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> heated silicon surfaces

A. Casel, E. Kasper, H. Kibbel et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 30 citations

Engineering, Materials Engineering, Materials Science +17

Dependence of hole transport on Ga doping in Si molecular beam epitaxy layers

A. Casel, H. Jorke, E. Kasper et al. · Applied Physics Letters · 1986 · 25 citations

Engineering, Materials Engineering, Materials Science +17