Properties of Si layers grown by molecular beam epitaxy at very low temperatures

Abstract

(100) silicon molecular beam epitaxy films with etch pit densities below 103 cm−2 and χmin values of 3.3–3.9% were grown at very low temperatures (Ts =250–350 °C). Although dopant activation is significantly below unity at n=1018 Sb atoms/cm3 Hall mobilities of homogeneously Sb-doped samples (Ts =250 °C, 300 °C) are found to match reasonably bulk values. δ doping at a monolayer Sb deposition shows a dopant activation of 0.45–0.81 with no detectable broadening at Ts =200 °C.