Parker Y. L. Tsang

Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

Goutam Kumar Dalapati, Sanatan Chattopadhyay, K.S.K. Kwa et al. · IEEE Transactions on Electron Devices · 2006 · 78 citations

Electrical Engineering, Engineering, Channel Thickness +13

A Semianalytical Description of the Hole Band Structure in Inversion Layers for the Physically Based Modeling of pMOS Transistors

Marco De Michielis, David Esseni, Parker Y. L. Tsang et al. · IEEE Transactions on Electron Devices · 2007 · 39 citations · Full text

Device Modeling, Pmos Transistors, Electrical Engineering +14

Modeling of the Threshold Voltage in Strained $\hbox{Si/Si}_{1 - x} \hbox{Ge}_{x}/\hbox{Si}_{1 - y}\hbox{Ge}_{y}(x \geq y)$ CMOS Architectures

Parker Y. L. Tsang, Sanatan Chattopadhyay, Suresh Uppal et al. · IEEE Transactions on Electron Devices · 2007 · 17 citations

Device Modeling, X \Geq Y, Electrical Engineering +12

Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate

K. Henson, H. Bu, Mulun Na et al. · 2008 · 16 citations

Engineering, Vlsi Design, Power Electronics +19

Using Piezoresistance Model With $C$– $R$ Conversion for Modeling of Strain-Induced Mobility

Parker Y. L. Tsang, A.G. O’Neill, Barry J. Gallacher et al. · IEEE Electron Device Letters · 2008 · 14 citations

Engineering, Mechanical Engineering, Superlinear Behavior +22