A. Tsukune

Ta 2 O 5 thin films with exceptionally high dielectric constant

Jun Lin, Nakabayasi Masaaki, A. Tsukune et al. · Applied Physics Letters · 1999 · 125 citations

Natural Sciences, Materials Engineering, Materials Science +17

The influence of the size effect of copper interconnects on RC delay variability beyond 45nm technology

Hideki Kitada, Takashi Suzuki, T. Kimura et al. · 2007 · 29 citations

Engineering, Electrical Engineering, Electronic Materials +16

Ultra thinning 300-mm wafer down to 7-µm for 3D wafer Integration on 45-nm node CMOS using strained silicon and Cu/Low-k interconnects

Y. S. Kim, A. Tsukune, Noritoshi Maeda et al. · 2009 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Different effect of annealing temperature on resistivity for stoichiometric, W rich, and N rich tungsten nitride films

Jun Lin, A. Tsukune, Toshiya Suzuki et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1999 · 24 citations

Natural Sciences, Materials Engineering, Materials Science +14

Stabilizing Dielectric Constants of Fluorine‐Doped SiO2 Films by  N 2 O  ‐Plasma Annealing

Shunsaku Takeishi, H. Kudoh, R. Shinohara et al. · Journal of The Electrochemical Society · 1996 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +15