Journal of The Electrochemical Society · 1996 · 23 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistrySurface ScienceThin FilmsDielectric CeramicsDielectric MaterialsDielectric PropertiesDielectricsThin Film AnnealingThin Film Electrical PropertiesAnnealing EffectsAnnealing Time EffectsDielectric ConstantLow-dielectric-constant MaterialsOxide DielectricsSilicon Dioxide
Fluorine‐doped (FSG) has a low dielectric constant just after deposition. However, the dielectric constant of FSG gradually increases with time when left in air. We have developed a way to stabilize dielectric constants of FSG left in the air by plasma annealing. We have found that ‐plasma annealing is quite effective for blocking moisture. The dielectric constants of FSG treated by the ‐plasma annealing rarely change.