Behnoush Attarimashalkoubeh

Author

Pohang University of Science and Technology

Also Known As

Attarimashalkoubeh, Behnoush, B. Attarimashalkoubeh, Behnoush Attarimashalkoubeh

Publications

100

Citations

H-Index

Concepts

All Affiliations

Pohang University of Science and Technology École Polytechnique Fédérale de Lausanne

About

Behnoush Attarimashalkoubeh is an author at Pohang University of Science and Technology specializing in microelectronics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	4	4	76
2	Electrical Engineering	4	4	76
3	Applied Physics	3	3	62
4	Computer Engineering	2	2	29
5	Social Sciences	1	1	14

Behnoush Attarimashalkoubeh

Publications

Citations

H-Index

Page 1

	Year	Citations
Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM) Behnoush Attarimashalkoubeh, Amit Prakash, Sangsul Lee, ECS Solid State Letters Materials EngineeringMaterials ScienceElectrical EngineeringElectrical CharacteristicsEngineering	2014	33
Chip-level CMOS co-integration of ReRAM-based non-volatile memories Elmira Shahrabi, Jury Sandrini, Behnoush Attarimashalkoubeh, Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureIntegrated Circuits	2016	15
Non-Linear I-V Characteristics of TiOy Film by Optimizing Thickness and Trap Density for Selector-Less ReRAM Nusrat Tamanna, S. H. Misha, Amit Prakash, ECS Solid State Letters	2014	14
Scalable Neuron Circuit Using Conductive-Bridge RAM for Pattern Reconstructions Junwoo Jang, Behnoush Attarimashalkoubeh, Amit Prakash, IEEE Transactions on Electron Devices EngineeringNeural Networks (Machine Learning)Emerging Memory TechnologyCbram DeviceNeurochip	2016	14
Effect of metal buffer layer and thermal annealing on HfO<inf>x</inf>-based ReRAMs Jury Sandrini, Behnoush Attarimashalkoubeh, Elmira Shahrabi, Non-volatile MemoryEngineeringEmerging Memory TechnologyIntegrated CircuitsEnforced Compliance	2016	14

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