Behnoush Attarimashalkoubeh

Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)

Behnoush Attarimashalkoubeh, Amit Prakash, Sangsul Lee et al. · ECS Solid State Letters · 2014 · 33 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +12

Chip-level CMOS co-integration of ReRAM-based non-volatile memories

Elmira Shahrabi, Jury Sandrini, Behnoush Attarimashalkoubeh et al. · 2016 · 15 citations · Full text

Non-volatile Memory, Engineering, Emerging Memory Technology +18

Non-Linear I-V Characteristics of TiOy Film by Optimizing Thickness and Trap Density for Selector-Less ReRAM

Nusrat Tamanna, S. H. Misha, Amit Prakash et al. · ECS Solid State Letters · 2014 · 14 citations · Full text

Scalable Neuron Circuit Using Conductive-Bridge RAM for Pattern Reconstructions

Junwoo Jang, Behnoush Attarimashalkoubeh, Amit Prakash et al. · IEEE Transactions on Electron Devices · 2016 · 14 citations · Full text

Engineering, Neural Networks (Machine Learning), Emerging Memory Technology +21

Effect of metal buffer layer and thermal annealing on HfO<inf>x</inf>-based ReRAMs

Jury Sandrini, Behnoush Attarimashalkoubeh, Elmira Shahrabi et al. · 2016 · 14 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17