Jury Sandrini

Analog Control of Retainable Resistance Multistates in HfO₂ Resistive-Switching Random Access Memories (ReRAMs)

Cecilia Giovinazzo, Jury Sandrini, Elmira Shahrabi et al. · ACS Applied Electronic Materials · 2019 · 30 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

OxRAM for embedded solutions on advanced node: scaling perspectives considering statistical reliability and design constraints

Jury Sandrini, L. Grenouillet, V. Meli et al. · 2019 · 21 citations

Engineering, Computer Engineering, Electrical Engineering +17

Chip-level CMOS co-integration of ReRAM-based non-volatile memories

Elmira Shahrabi, Jury Sandrini, Behnoush Attarimashalkoubeh et al. · 2016 · 15 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +14

Effect of metal buffer layer and thermal annealing on HfO<inf>x</inf>-based ReRAMs

Jury Sandrini, Behnoush Attarimashalkoubeh, Elmira Shahrabi et al. · 2016 · 14 citations

Engineering, Materials Engineering, Materials Science +17

BEOL Process Effects on ePCM Reliability

Andrea Redaelli, A. Gandolfo, G. Samanni et al. · IEEE Journal of the Electron Devices Society · 2022 · 14 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +17