K. Kadoiwa - Concepedia

Author

K. Kadoiwa

Mitsubishi Electric (Japan)

Also Known As

K Kadoiwa, K. Kadoiwa, Kadoiwa, Kaoru, Kaoru KADOIWA, Kaoru Kadoiwa

Publications

267

Citations

H-Index

Concepts

All Affiliations

Mitsubishi Electric (Japan)Mitsubishi Electric (Germany)Mitsubishi Group (Japan)

About

K. Kadoiwa is an author at Mitsubishi Electric (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	160
2	Applied Physics	6	6	133
3	Electrical Engineering	5	5	122
4	Materials Science	4	4	70
5	Chemistry	2	2	37

K. Kadoiwa

Publications

194

Citations

H-Index

Page 1

	Year	Citations
150 mW fundamental-transverse-mode operation of 670 nm window laser diode S. Arimoto, M. Yasuda, Akihiro Shima, IEEE Journal of Quantum Electronics Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser ScienceLaser Applications	1993	47
Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si N. Hayafuji, Motoharu Miyashita, Takashi Nishimura, Japanese Journal of Applied Physics EngineeringSemiconductor DeviceSemiconductorsNanoelectronicsMolecular Beam Epitaxy	1990	35
Donor passivation in n-AllnAs layers by fluorine Yoshiyuki Yamamoto, N. Hayafuji, N. Fujii, Journal of Electronic Materials Surface ScienceSolid-state ChemistryMolecular CommunicationChemistryDonor Passivation	1996	24
Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs H. Sasaki, T. Hisaka, K. Kadoiwa, Microelectronics Reliability Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsDisplacement Defects	2017	16
Reliability study on high-power 638nm broad stripe laser diode Hiroshi Mitsuyama, T. Motoda, Takehiro Nishida, Optical Review ReliabilityElectrical EngineeringReliability StudyEngineeringLaser Material	2014	14
Crack Propagation and Mechanical Fracture in GaAs-on-Si N. Hayafuji, H. Kizuki, Motoharu Miyashita, Japanese Journal of Applied Physics SemiconductorsCrack PropagationEngineeringCrystalline DefectsMechanical Engineering	1991	13
Mechanism of Zn passivation in AlGaInP layer grown by metalorganic chemical vapor deposition K. Kadoiwa, M. Kato, T. Motoda, Journal of Crystal Growth Materials ScienceEngineeringCorrosionSurface ScienceAlgainp Layer	1994	13
Zn diffusion behavior at the InGaAsP/InP heterointerface grown using MOCVD K. Kadoiwa, Kenichi Ono, Y. Ohkura Journal of Crystal Growth Materials ScienceIi-vi SemiconductorEngineeringSurface ScienceApplied Physics	2006	12
Surface morphology improvement of GaAs-on-Si using a two-reactor MOCVD system and an AlAs/GaAs low temperature buffer layer: an approach to crack-free GaAs-on-Si Takuya Nishimura, K. Kadoiwa, N. Hayafuji, Journal of Crystal Growth	1991	10
GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System Takashi Nishimura, K. Kadoiwa, N. Hayafuji, Japanese Journal of Applied Physics EngineeringIntegrated CircuitsMocvd SystemSemiconductor DeviceSemiconductors	1989	10

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