K. Kadoiwa

150 mW fundamental-transverse-mode operation of 670 nm window laser diode

S. Arimoto, M. Yasuda, Akihiro Shima et al. · IEEE Journal of Quantum Electronics · 1993 · 47 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +21

Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si

N. Hayafuji, Motoharu Miyashita, Takashi Nishimura et al. · Japanese Journal of Applied Physics · 1990 · 35 citations

Engineering, Semiconductor Device, Semiconductors +19

Donor passivation in n-AllnAs layers by fluorine

Yoshiyuki Yamamoto, N. Hayafuji, N. Fujii et al. · Journal of Electronic Materials · 1996 · 24 citations

Surface Science, Solid-state Chemistry, Molecular Communication +2

Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs

H. Sasaki, T. Hisaka, K. Kadoiwa et al. · Microelectronics Reliability · 2017 · 16 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +5

Reliability study on high-power 638nm broad stripe laser diode

Hiroshi Mitsuyama, T. Motoda, Takehiro Nishida et al. · Optical Review · 2014 · 14 citations

Reliability, Electrical Engineering, Reliability Study +4