150 mW fundamental-transverse-mode operation of 670 nm window laser diode

Abstract

Fundamental-transverse-mode high-power CW operation over 150 mW has been realized in AlGaInP/GaInP 670-nm window laser diodes. A window structure of Zn-induced-disordered GaInP has been fabricated by solid phase diffusion using ZnO film. A compressively strained double-quantum-well active layer and a multiple quantum barrier (MQB) also have been employed for reduction of threshold current. Stable CW operation beyond 1500 h has been observed under 50 mW at 50 degrees C.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>