Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs - Concepedia

Concepedia

Publication | Closed Access

Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs

16

Citations

17

References

2017

Year

H. Sasaki, T. Hisaka, K. Kadoiwa, Tomoki Oku, Shinobu Onoda, Takeshi Ohshima, Eiji Taguchi, Hidehiro Yasuda

Microelectronics Reliability

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsDisplacement DefectsAluminum Gallium NitrideGan Power DeviceAlgan/gan Hemts

References

	Year	Citations

Page 1