Shubhra S. Pasayat

Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays

Shubhra S. Pasayat, Chirag Gupta, Matthew S. Wong et al. · Applied Physics Express · 2020 · 134 citations

Engineering, Optoelectronic Devices, Light Output Power +16

Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

Mohamadali Malakoutian, D. Field, Nicholas Hines et al. · ACS Applied Materials & Interfaces · 2021 · 113 citations · Full text

High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

Pawana Shrestha, Matthew Guidry, Brian Romanczyk et al. · IEEE Electron Device Letters · 2020 · 88 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemts +11

Color-tunable <b>&amp;lt;</b>10 <i> <b>μ</b> </i>m square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates

Shubhra S. Pasayat, Ryan Ley, Chirag Gupta et al. · Applied Physics Letters · 2020 · 60 citations

Optical Materials, Engineering, Optoelectronic Devices +17

Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates

Shubhra S. Pasayat, Chirag Gupta, Matthew S. Wong et al. · Applied Physics Letters · 2020 · 50 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15