2005 · 18 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceElectrochemistryElectronic MaterialsMaterials CharacterizationDevice CharacterizationDevice SimulationDopingElectrical CharacterizationSemiconductor SurfacesSurface CharacterizationCapacitance-voltage CharacteristicsCapacitance-voltage CharacterizationCapacitance-voltage MeasurementsCapacitance-voltage RelationsCrystalline SiliconIonizationPhase Diagram ModelingSilicon
ABSTRACT: A comprehensive study of the doping profiles of aluminium alloyed (screen printed and RTP fired) back surface field (BSF) layers in crystalline silicon is presented, based on the electrochemical capacitance-voltage (ECV) profile measuring technique combined with an advanced evaluation. Precise measurements of pure Al profiles are compared with simulations made using the Al-Si phase diagram. The contribution of boron doping from the glass frit and the dependence of BSF formation on crystal orientation investigated. The importance of incomplete ionization of Al atoms at room temperature is introduced.