XPS and Raman Characterizations of Zn_1-xCd_xO Films Grown at the Different Growth Conditions

Abstract

X-ray photoelectron spectroscopy was employed to characterize the surface chemistry and electronic properties of the Zn1-xCdxO semiconductor systems obtained at the dierent growth conditions. The eect of the growth conditions on the core and valence band spectra as well as room-temperature photoluminescence of the Zn1-xCdxO lms was investigated and discussed. Behavior of the mX-ray photoelectron spectroscopy peaks indicated an increase of the cadmium and a depletion of the oxygen concentrations upon changing the Ar/O2 gas ratio and dc power.