Pb1−xSnxTe photovoltaic diodes and diode lasers produced by proton bombardment

TYPE CONVERSION AND <i>n-p</i> JUNCTION FORMATION IN Hg1−<i>x</i>Cd<i>x</i>Te PRODUCED BY PROTON BOMBARDMENT

A.G. Foyt, T. C. Harman, J.P. Donnelly · Applied Physics Letters · 1971 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

<i>n-p</i> JUNCTION PHOTODETECTORS IN InSb FABRICATED BY PROTON BOMBARDMENT

A.G. Foyt, W.T. Lindley, J.P. Donnelly · Applied Physics Letters · 1970 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

<i>n-p</i> JUNCTION PHOTOVOLTAIC DETECTORS IN PbTe PRODUCED BY PROTON BOMBARDMENT

J.P. Donnelly, T. C. Harman, A.G. Foyt · Applied Physics Letters · 1971 · 43 citations

Engineering, Electrical Engineering, Materials Science +17

PHOTOVOLTAIC EFFECT IN Pb<i>x</i>Sn1−<i>x</i>Te DIODES

I. Melngailis, A. R. Calawa · Applied Physics Letters · 1966 · 37 citations

Engineering, Materials Engineering, Materials Science +17