Applied Physics Letters · 1966 · 37 citations · 1 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsOptical Properties Of SemiconductorsOptoelectronic MaterialsP-n JunctionsPhotovoltaic DevicesSemiconductor Device MaterialsSemiconductor PhysicsP-n Junction Solar CellsPhotodetector MaterialsPhotoluminescencePhotoluminescence SpectroscopyPhotonic Band StructurePhotovoltaic Infrared DetectorsSemiconductor Infrared MaterialsSemiconductor Junctions
Photovoltaic response has been observed in p-n junctions of PbxSn1−xTe at wavelengths up to 9.5 μ at 77°K and up to 12 μ at 12°K. These results together with previous photoluminescence data and the proposed model for the band structure of PbxSn1−xTe (ref. 1) indicate that these alloys have considerable potential for efficient infrared detection throughout the 8 to 14 μ atmospheric window and well beyond.
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J.F. Butler, A. R. Calawa, Robert J. Phelan et al. · Applied Physics Letters · 1964 · 87 citations