Applied Physics Letters · 1971 · 43 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDetector TechnologyP-n JunctionsPhotodetectorsPhotovoltaic DevicesSemiconductor DetectorsSemiconductor PhysicsDetector BiasingDetector FabricationJunction ResistanceP-i-n PhotodetectorsP-n Junction CharacteristicsP-n Junction DetectorsP-type DopingSemiconductor Radiation Detectors
n-p junction photovoltaic detectors in PbTe have been fabricated using proton bombardment to create the n-type layer. At 77°K, zero-bias resistance area products of 300 Ω cm2 were observed for diodes with dimensions as large as 15 mil square. Peak detectivities at 5 μm in reduced background as high as 3.3×1011 cm Hz1/2/W were observed. Diode quantum efficiencies were typically greater than 30% at 5 μm.
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