IEEE Journal of the Electron Devices Society · 2023 · 10 citations · 13 references
ComputingComputational EngineeringComputer EngineeringDesign OptimizationMachine LearningSimulation-based DesignComputational ModelingDevice ModelingDevice SimulationNeural NetworksOptimization For Machine LearningAccuracyBinningCompact ModelingCoverageData SparsityData Sparsity HandlingNeural Network ModelingSparsity Problem
The artificial neural network (ANN)-based compact model has significant advantages over physics-based standard compact models such as BSIM-CMG because it can achieve higher accuracy over a wide range of geometric parameters. This makes it particularly suitable for design space exploration and optimization. However, the ANN-based compact model using only one set of model parameters (global-ANN) requires larger model sizes to achieve wider coverage and higher accuracy in order to capture the unpredictable nonlinearities of emerging devices. This results in reduced simulation speed and a trade-off between simulation accuracy, model coverage, and simulation speed makes it difficult to utilize ANN-based compact models in a variety of ways. To solve this problem, we propose the first ANN-based compact modeling flow using a binning method (binning-ANN) and we address the training requirements and data sparsity issues that may occur due to the binning method in ANNs. In addition, we develop a bin size optimization guideline for the binning-ANN. As a result, the binning-ANN not only has higher accuracy, but also much better expandability than existing methods.
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ASAP7: A 7-nm finFET predictive process design kit
Lawrence T. Clark, Vinay Vashishtha, L. Shifren et al. · Microelectronics Journal · 2016 · 736 citations · Full text
BSIM-CMG: Standard FinFET compact model for advanced circuit design
Juan Pablo Duarte, Sourabh Khandelwal, Aditya Medury et al. · 2015 · 106 citations