Publication | Closed Access
Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices
21
Citations
34
References
2023
Year
EngineeringChip Size MinimizationIntegrated CircuitsPower ElectronicsInterconnect (Integrated Circuits)Advanced Packaging (Semiconductors)Wide-bandgap SemiconductorsUltrawide BandgapElectronic PackagingElectrical EngineeringComputer EngineeringMicroelectronicsWide BandgapLow-power ElectronicsAdvanced PackagingChip SizeChip-scale PackagePower IcTechnology Scaling
Chip size ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${A}_{\text {chip}}$ </tex-math></inline-formula> ) optimization is key to the accurate analysis of device and material costs and the design of multichip modules. It is particularly critical for wide bandgap (WBG) and ultrawide bandgap (UWBG) power devices due to high material cost. Moreover, the designs of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${A}_{\text {chip}}$ </tex-math></inline-formula> and the drift region thickness ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${W}_{\text {dr}}$ </tex-math></inline-formula> ) and doping concentration ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${N}_{\text {dr}}$ </tex-math></inline-formula> ) are interdependent, requiring their co-optimization. Current design practices for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${A}_{\text {chip}}$ </tex-math></inline-formula> , <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${W}_{\text {dr}}$ </tex-math></inline-formula> , and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${N}_{\text {dr}}$ </tex-math></inline-formula> rely on optimizing electrical parameters. <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{^{^{}}}$ </tex-math></inline-formula> This work presents a new, holistic, electrothermal approach to optimize <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${A}_{\text {chip}}$ </tex-math></inline-formula> for a given set of target specifications, including breakdown voltage (BV), conduction current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{{0}}$ </tex-math></inline-formula> ), and switching frequency ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}$ </tex-math></inline-formula> ). The conduction and switching losses of the device are considered as well as the heat dissipation in the chip and its package. For a given BV and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {o}}$ </tex-math></inline-formula> , the optimal <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${A}_{\text {chip}}$ </tex-math></inline-formula> , <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${W}_{\text {dr}}$ </tex-math></inline-formula> , and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${N}_{\text {dr}}$ </tex-math></inline-formula> show a strong dependence on <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}$ </tex-math></inline-formula> and thermal management. Such dependencies are missing in prior <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${A}_{\text {chip}}$ </tex-math></inline-formula> design methods. This approach is applied to compare the optimal <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${A}_{\text {chip}}$ </tex-math></inline-formula> of WBG and UWBG devices up to a BV over 10 kV and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}$ </tex-math></inline-formula> of 1 MHz. <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{^{^{}}}$ </tex-math></inline-formula> Our approach offers more accurate cost analysis and design guidelines for power modules.
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