Packaged Ga₂O₃ Schottky Rectifiers With Over 60-A Surge Current Capability

Ming Xiao, Boyan Wang, Jingcun Liu, +8

IEEE Transactions on Power Electronics

SemiconductorsLow Thermal ConductivityElectrical EngineeringWide-bandgap SemiconductorEngineering +13

2.5 kV Vertical Ga₂O₃ Schottky Rectifier With Graded Junction Termination Extension

Boyan Wang, Ming Xiao, Joseph Spencer, +4

IEEE Electron Device Letters

High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K

Boyan Wang, Ming Xiao, Xiaodong Yan, +5

Applied Physics Letters

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering +13

TCAD-Machine Learning Framework for Device Variation and Operating Temperature Analysis With Experimental Demonstration

Hiu Yung Wong, Ming Xiao, Boyan Wang, +6

IEEE Journal of the Electron Devices Society

Wide-bandgap SemiconductorEngineeringMachine LearningSemiconductor DeviceLayer Thickness +22

Improvement of TCAD Augmented Machine Learning Using Autoencoder for Semiconductor Variation Identification and Inverse Design

Kashyap Mehta, Sophia Susan Raju, Ming Xiao, +3

IEEE Access

Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringMachine Learning +12

TCAD-Augmented Machine Learning With and Without Domain Expertise

Harsaroop Dhillon, Kashyap Mehta, Ming Xiao, +3

IEEE Transactions on Electron Devices

Artificial IntelligenceEngineeringMachine LearningMachine Learning ToolSemiconductor Device +14

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

Boyan Wang, Ming Xiao, Jack Knoll, +5

IEEE Electron Device Letters

Rf DevicesLow Thermal ResistanceEngineeringThermal ConductivityThermal Resistance +18

Polytetrafluoroethylene (PTFE)/silane cross-linked sulfonated poly(styrene–ethylene/butylene–styrene) (sSEBS) composite membrane for direct alcohol and formic acid fuel cells

Boyan Wang, Chiyang Kevin Tseng, Chao‐Ming Shih, +3

Journal of Membrane Science

Cross-linked Sulfonated PolyCatalytic MembraneChemical EngineeringMembrane StructureEngineering +9

NiO junction termination extension for high-voltage (<b>&amp;gt;</b>3 kV) Ga2O3 devices

Ming Xiao, Boyan Wang, Joseph Spencer, +7

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringGa2o3 DevicesOptoelectronic DevicesSemiconductor Device +14

Packaging of a 10-kV Double-Side Cooled Silicon Carbide Diode Module With Thin Substrates Coated by a Nonlinear Resistive Polymer-Nanoparticle Composite

Zichen Zhang, Shengchang Lu, Boyan Wang, +5

IEEE Transactions on Power Electronics

EngineeringPower DevicesThin Substrates CoatedPower Electronic SystemsPower Electronics +18