Concepedia

Author

Joseph Spencer

United States Naval Research LaboratoryORCID

Also Known As

Joseph A. Spencer, Joseph Spencer, Joseph spencer

50

Publications

1.3K

Citations

14

H-Index

60

Concepts

All Affiliations

United States Naval Research LaboratoryVirginia TechUniversity of Southern CaliforniaUniversity of Colorado BoulderALD NanoSolutions (United States)
JS

About

Joseph Spencer is an author at United States Naval Research Laboratory specializing in engineering, applied physics, and materials science.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

12

13

621

2

Applied Physics

11

11

322

3

Chemical Engineering

2

2

299

4

Natural Sciences

1

1

12

5

Chemistry

1

1

193

Joseph Spencer

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15

Publications

734

Citations

13

H-Index

YearCitations

Atomic layer deposition on particles using a fluidized bed reactor with in situ mass spectrometry

David M. King, Joseph Spencer, Xinhua Liang,

Surface and Coatings Technology

2007

193

Novel Processing to Produce Polymer/Ceramic Nanocomposites by Atomic Layer Deposition

Xinhua Liang, Luis F. Hakim, Guodong Zhan,

Journal of the American Ceramic Society

2006

106

2.5 kV Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Rectifier With Graded Junction Termination Extension

Boyan Wang, Ming Xiao, Joseph Spencer,

IEEE Electron Device Letters

2022

100

10-kV Ga<sub>2</sub>O<sub>3</sub> Charge-Balance Schottky Rectifier Operational at 200 °C

Yuan Qin, Ming Xiao, Matthew Porter,

IEEE Electron Device Letters

2023

72

Atmospheric pressure spatial atomic layer deposition web coating with<i>in situ</i>monitoring of film thickness

Alexander S. Yersak, Yung C. Lee, Joseph Spencer,

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

2013

48

NiO junction termination extension for high-voltage (<b>&amp;gt;</b>3 kV) Ga2O3 devices

Ming Xiao, Boyan Wang, Joseph Spencer,

Applied Physics Letters

2023

41

First Demonstration of Vertical Superjunction Diode in GaN

Ming Xiao, Yunwei Ma, Zhonghao Du,

2022 International Electron Devices Meeting (IEDM)

2022

30

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices

Yunwei Ma, Yuan Qin, Matthew Porter,

Advanced Electronic Materials

2023

30

Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

Joseph Spencer, Marko J. Tadjer, Alan G. Jacobs,

Applied Physics Letters

2022

25

2 kV, 0.7 mΩ•cm<sup>2</sup> Vertical Ga<sub>2</sub>O<sub>3</sub> Superjunction Schottky Rectifier with Dynamic Robustness

Yuan Qin, Matthew Porter, Ming Xiao,

2023

18

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